Is a
Patent attributes
Current Assignee
Patent Jurisdiction
Patent Number
Patent Inventor Names
Pei-Yang Yan0
Date of Patent
November 27, 2007
0Patent Application Number
108649450
Date Filed
June 9, 2004
0Patent Primary Examiner
Patent abstract
An extreme ultraviolet lithography (EUVL) mask blank may include a multilayer (ML) capping structure on the ML reflective coatings on the substrate. The ML capping structure may include alternating layers of a capping material, e.g., ruthenium, and a material with a lower EUV absorption coefficient, e.g., silicon. The top layer of the ML structure may be a layer of the capping material. Capping interfaces between the layers may provide constructive interference of reflected light.
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