US Patent 7300731 Spatially-doped charge transport layers
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Patent Inventor Names
Ying Wang0
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Patent abstract
The present invention relates to new a charge transport layer that includes first charge transport material which is spatially doped with a second charge transport material. The charge transport layer may either be a hole or electron transport layer and is useful in organic electronic devices.
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US Patent 07300731 Spatially-doped charge transport layers US Patent 7300731 Spatially-doped charge transport layers
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Patent Number
073007310
Patent Number
73007310
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Patent Number
073007310
Date of Patent
November 27, 2007
0Patent Application Number
109148730
Date Filed
August 10, 2004
0Official Website
Patent Primary Examiner
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US Patent 07300731 Spatially-doped charge transport layers
Infobox
Is a
Patent jurisdiction
Patent number
07300731
Date of patent
November 27, 2007
Patent application number
10914873
Date Filed
August 10, 2004
Patent primary examiner
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