Is a
Patent attributes
Patent Jurisdiction
Patent Number
Patent Inventor Names
Hideto Motoshima0
Junji Nishimoto0
Makoto Horinouchi0
Shouichi Sonohata0
Hisanobu Shimodozono0
Date of Patent
November 27, 2007
0Patent Application Number
114111370
Date Filed
April 26, 2006
0Patent Primary Examiner
Patent abstract
Disclosed is a photoresist film which is formed in a manner of covering at least a source electrode, a source line, a pixel electrode, a drain electrode, a drain line, a semiconductor film and a protective film, and further covering a gate insulting film in their vicinities. Moreover, wet and dry etchings are sequentially performed by using the photoresist film as a mask. Due to this etching, a residual pattern existing on the gate insulating film is etched.
Timeline
No Timeline data yet.
Further Resources
No Further Resources data yet.
