Is a
Patent attributes
Patent Jurisdiction
Patent Number
Patent Inventor Names
Qi Wang0
Date of Patent
November 27, 2007
0Patent Application Number
106217120
Date Filed
July 17, 2003
0Patent Primary Examiner
Patent abstract
A silicon nitride film formation method includes: Heating a substrate to be subjected to film formation to a substrate temperature; heating a wire to a wire temperature; supplying silane, ammonia, and hydrogen gases to the heating member; and forming a silicon nitride film on the substrate.
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