Is a
Patent attributes
Patent Jurisdiction
Patent Number
Patent Inventor Names
Hisakazu Matsumori0
Date of Patent
November 27, 2007
0Patent Application Number
111533670
Date Filed
June 16, 2005
0Patent Primary Examiner
Patent abstract
According to an aspect of the invention, there is provided a semiconductor device provided with a CMOS-FET circuit, comprising at least one of a tensile stress film disposed in a part of an element isolating film around an NMOS forming region and having a tensile stress, and a compressive stress film disposed in a part of an element isolating film around a PMOS forming region and having a compressive stress.
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