Is a
Patent attributes
Patent Jurisdiction
Patent Number
Patent Inventor Names
Tetsuo Kawakita0
Hiroshi Tsutsu0
Shin-itsu Takehashi0
Yoshinao Taketomi0
Date of Patent
December 11, 2007
0Patent Application Number
108721010
Date Filed
June 21, 2004
0Patent Citations Received
Patent Primary Examiner
Patent abstract
A number of minuscule LDD thin film transistors with high precision are arranged on a substrate for use in a liquid crystal display apparatus or other similar devices. The gate electrode is used as a mask at the time of injecting impurities into the semiconductor layer. To realize an LDD structure, the impurities are injected in two installments. The size of the gate electrode is changed in accordance with the length of the LDD regions between the first and second injections. The size of the gate electrode is changed by means of metal oxidation or dry etching. For precision dry etching of the gate electrode, various ideas are put into forming the photo resist.
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