Is a
Patent attributes
Patent Jurisdiction
Patent Number
Patent Inventor Names
Takashi Iwasaki0
Shigeru Sawada0
Hiroya Kimura0
Kenji Ohki0
Date of Patent
December 11, 2007
0Patent Application Number
105149730
Date Filed
April 13, 2004
0Patent Primary Examiner
Patent abstract
A compound semiconductor wafer providing an InGaAs light receiving layer having superior crystal characteristic suitable for a near-infrared sensor includes an InAsxP1-x graded buffer layer consisting of a plurality of layers positioned on an InP substrate and an InAsyP1-y buffer layer positioned on the graded buffer layer, sandwiched between said InP substrate and the InGaAs layer, wherein maximum value of PL light emission intensity at an interface of each of the layers of the graded buffer layer and the buffer layer is, at every interface, smaller than 3/10 of the maximum PL light emission intensity of the buffer layer.
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