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US Patent 7307314 LDMOS transistor with improved gate shield

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Patent Citations Received
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US Patent 11804526 Semiconductor device
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US Patent 11791386 Semiconductor device
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Patent Inventor Names
Jeff Babcock1
Johan Agus Darmawan1
John Mason1
Ly Diep1
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Patent abstract

A LDMOS transistor having a gate shield provides reduced drain coupling to the gate shield and source by restricting the thickness of the gate shield and by confining a source contact to the source region without overlap of the gate.

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US Patent 07307314 LDMOS transistor with improved gate shield US Patent 7307314 LDMOS transistor with improved gate shield

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Patent Number
073073141
Patent Number
73073141
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Official Website
https://pdfpiw.uspto.gov/.piw?Docid=073073141
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Infobox
Is a
Patent
Patent
1
Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
1
Patent Number
073073141
Date of Patent
December 11, 2007
1
Patent Application Number
108707531
Date Filed
June 16, 2004
1
Official Website
https://pdfpiw.uspto.gov/.piw?Docid=073073141
Patent Primary Examiner
‌
A. Sefer
1
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Website URL
https://pdfpiw.uspto.gov/.piw?Docid=07307314
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 US Patent 07307314 LDMOS transistor with improved gate shield

Infobox
Is a
Patent
Patent
Patent jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
Patent number
07307314
Date of patent
December 11, 2007
Patent application number
10870753
Date Filed
June 16, 2004
Patent primary examiner
‌
A. Sefer

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