Is a
Patent attributes
Current Assignee
Patent Jurisdiction
Patent Number
Patent Inventor Names
Chin-Kuo Ting0
Date of Patent
December 11, 2007
0Patent Application Number
112202760
Date Filed
September 6, 2005
0Patent Primary Examiner
Patent abstract
A thin film transistor, comprising a first N-type LDD (Lightly Doped Drain) and a second N-type LDD, is provided. The two N-type LDDs are formed in a semiconductor layer by tilted implantation with a gate electrode serving as a mask. The two N-type LDDs are adjacent to source/drain regions, respectively. The thin film transistor further comprises a third P-type LDD and a fourth P-type LDD. The two P-type LDDs are formed in a semiconductor layer by tilted implantation with a gate electrode serving as a mask. The source/drain regions and the two N-type LDDs are surrounded by the two P-type LDDs, respectively.
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