US Patent 7307491 High density three-dimensional RF / microwave switch architecture

RF switching system (100, 200) formed from a structure (102, 202) comprised of dielectric material. The structure can have two or more faces (104, 204), with at least one face located in a plane exclusive of at least a second one of the faces. For example, the structure can define a geometric shape that is a polyhedron. RF switches (106, 206) can be disposed on two or more of the faces. Conductive RF feed stubs (110, 210) are provided for each RF switch extending from an interconnection point (114, 214) to electrical contact terminals (116, 216) that are respectively connected to the RF switches. The interconnection point is located within the structure at a location generally medial to the two or more of terminals.