US Patent 7308067 Read bias scheme for phase change memories
Patent 7308067 was granted and assigned to Intel on December, 2007 by the United States Patent and Trademark Office.
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Patent Inventor Names
Tyler A. Lowrey0
Ward D. Parkinson0
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Patent abstract
A read bias scheme may be used for phase change memories including a chalcogenide access device and a chalcogenide memory element. Through an appropriate read bias scheme, desirable read margin can be achieved. This may result in better yield, higher reliability, and ultimately lower costs in some cases.
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US Patent 07308067 Read bias scheme for phase change memories US Patent 7308067 Read bias scheme for phase change memories
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Patent Number
073080670
Patent Number
73080670
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Current Assignee
Patent Jurisdiction
Patent Number
073080670
Date of Patent
December 11, 2007
0Patent Application Number
106338720
Date Filed
August 4, 2003
0Official Website
Patent Primary Examiner
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US Patent 07308067 Read bias scheme for phase change memories
Infobox
Is a
Current assignee
Patent jurisdiction
Patent number
07308067
Date of patent
December 11, 2007
Patent application number
10633872
Date Filed
August 4, 2003
Patent primary examiner
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