Is a
Patent attributes
Patent Jurisdiction
Patent Number
Patent Inventor Names
Ho-Kwang Mao0
Russell J. Hemley0
Chih-shiue Yan0
Date of Patent
December 18, 2007
0Patent Application Number
114012880
Date Filed
April 11, 2006
0Patent Primary Examiner
Patent abstract
A single crystal diamond grown by microwave plasma chemical vapor deposition annealed at pressures in excess of 4.0 GPa and heated to temperature in excess of 1500 degrees C. that has a hardness of greater than 120 GPa. A method for manufacture a hard single crystal diamond includes growing a single crystal diamond and annealing the single crystal diamond at pressures in excess of 4.0 GPa and a temperature in excess of 1500 degrees C. to have a hardness in excess of 120 GPa.
Timeline
No Timeline data yet.
Further Resources
No Further Resources data yet.
