US Patent 7312684 Semiconductor device

A semiconductor device includes a semiconductor substrate, an insulating film formed on the semiconductor substrate, and a thin-film inductor element which is formed on the insulating film, and which includes first and second terminals and a conductive layer formed into a spiral shape between the first and second terminals so as to have a plurality of turns and at least one intersection. The conductive layer includes (i) a first conductor layer formed on the semiconductor substrate, and (ii) a second conductor layer which is formed on the insulating film, intersects the first conductor layer via the insulating film at the intersection. The thin-film inductor element has an arrangement in which the first and second conductor layers are symmetrically arranged in directions from an intermediate point between the first and second terminals along the longitudinal direction of the conductive layer to the first and second terminals.