Is a
Patent attributes
Patent Jurisdiction
Patent Number
Patent Inventor Names
Aaron Jay Knobloch0
Jie Jiang0
Stacey Joy Kennerly0
Vinayak Tilak0
David Mulford Shaddock0
David Richard Esler0
Date of Patent
January 1, 2008
0Patent Application Number
115093970
Date Filed
August 25, 2006
0Patent Primary Examiner
Patent abstract
A high-temperature pressure sensor that includes a dielectric layer. The pressure sensor also includes a substrate capable of withstanding temperatures greater than 450° C. without entering a phase change, at least one semiconducting material deposited on the sapphire substrate, and a silicon dioxide layer deposited over the semiconducting material. One aspect of the pressure sensor includes a second semiconducting material.
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