US Patent 7314520 Low 1c screw dislocation 3 inch silicon carbide wafer
Patent 7314520 was granted and assigned to Cree Inc. on January, 2008 by the United States Patent and Trademark Office.
All edits
Edits on 16 Sep, 2023
Golden AI
Edits made to:
Infobox (+5 properties)
Infobox
Patent Inventor Names
Adrian Powell0
Mark Brady0
Robert T. Leonard0
Stephen G. Mueller0
Valeri F. Tsvetkov0
Edits on 1 Sep, 2023
Golden AI
Edits made to:
Article (+181 characters)
Article
Patent abstract
A high quality single crystal wafer of SiC is disclosed having a diameter of at least about 3 inches and a 1 c screw dislocation density of less than about 2000 cm−2.
Edits on 25 May, 2023
Golden AI
Edits made to:
Infobox (+1/-1 properties)
US Patent 07314520 Low 1c screw dislocation 3 inch silicon carbide wafer US Patent 7314520 Low 1c screw dislocation 3 inch silicon carbide wafer
Infobox
Patent Number
07314520
Patent Number
7314520
Edits on 23 May, 2023
Golden AI
Edits made to:
Infobox (-1 properties)
Infobox
Official Website
Edits on 17 Jun, 2022
Golden AI
Edits made to:
Infobox (+1 properties)
Infobox
Website URL
Edits on 23 Nov, 2021
Golden AI
Edits made to:
Infobox (+8 properties)
US Patent 07314520 Low 1c screw dislocation 3 inch silicon carbide wafer
Infobox
Is a
Current assignee
Patent jurisdiction
Patent number
07314520
Date of patent
January 1, 2008
Patent application number
10957806
Date Filed
October 4, 2004
Patent primary examiner
Find more entities like US Patent 7314520 Low 1c screw dislocation 3 inch silicon carbide wafer
Use the Golden Query Tool to find similar entities by any field in the Knowledge Graph, including industry, location, and more.
