Is a
Patent attributes
Current Assignee
Patent Jurisdiction
Patent Number
Date of Patent
January 1, 2008
Patent Application Number
10957807
Date Filed
October 4, 2004
Patent Citations Received
Patent Primary Examiner
Patent abstract
A high quality single crystal wafer of SiC is disclosed having a diameter of at least about 100 mm and a micropipe density of less than about 25 cm−2.
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