Is a
Patent attributes
Patent Jurisdiction
Patent Number
Patent Inventor Names
Shrinivas Govindarajan0
Date of Patent
January 8, 2008
0Patent Application Number
110317160
Date Filed
January 7, 2005
0Patent Primary Examiner
Patent abstract
A capacitor (10) includes a substrate (12) and two metal electrodes (14, 18). A dielectric layer (16) is formed between the electrodes. Preferably, the dielectric layer has a dielectric constant greater than 25 and an adequate conduction band offset with silicon. Exemplary embodiments proposed use the following material systems: HfuTivTawOxNy, HfuTivOxNy, TiuSrvOxNy, TiuAlvOxNy and HfuSrvOxNy (where u, v, w, x, and y are the atomic proportions of the elements in the dielectric stack).
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