US Patent 7320913 Methods of forming split-gate non-volatile memory devices

Patent 7320913 was granted and assigned to Samsung on January, 2008 by the United States Patent and Trademark Office.

Overview Structured Data Issues Contributors Activity

Is a

Patent

Patent attributes

Current Assignee

Samsung

Patent Jurisdiction

United States Patent and Trademark Office

Patent Number

7320913

Date of Patent

January 22, 2008

Patent Application Number

11368247

Date Filed

March 3, 2006

Patent Primary Examiner

‌

Zandra V. Smith

Patent abstract

Non-volatile memory devices and methods for fabricating non-volatile memory devices are disclosed. More specifically, split gate memory devices are provided having frameworks that provide increased floating gate coupling ratios, thereby enabling enhanced programming and erasing efficiency and performance.

Timeline

No Timeline data yet.

Further Resources

Title

Author

Link

Type

Date

No Further Resources data yet.

References

Find more entities like US Patent 7320913 Methods of forming split-gate non-volatile memory devices

Use the Golden Query Tool to find similar entities by any field in the Knowledge Graph, including industry, location, and more.

Open Query Tool

Access by API