Is a
Patent attributes
Patent Jurisdiction
Patent Number
Patent Inventor Names
Hideaki Ohashi0
Date of Patent
January 22, 2008
Patent Application Number
10274876
Date Filed
October 22, 2002
Patent Primary Examiner
Patent abstract
Gate length is 110 nm±15 nm or shorter (130 nm or shorter in a design rule) or an aspect ratio of an area between adjacent gate electrode structures thereof (ratio of the height of the gate electrode structure to the distance between the gate electrode structures) is 6 or higher. A PSG (HDP-PSG: Phospho Silicate Glass) film containing a conductive impurity is formed as an interlayer insulating film for burying the gate electrode structures at film-formation temperature of 650° C. or lower by a high-density plasma CVD (HDP-CVD) method.
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