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US Patent 7323400 Plasma processing, deposition and ALD methods

Patent 7323400 was granted and assigned to Micron Technology on January, 2008 by the United States Patent and Trademark Office.

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Patent
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Patent attributes

Current Assignee
Micron Technology
Micron Technology
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Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
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Patent Number
73234000
Patent Inventor Names
Neal R. Rueger0
Date of Patent
January 29, 2008
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Patent Application Number
109308950
Date Filed
August 30, 2004
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Patent Primary Examiner
‌
Steven Loke
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Patent abstract

A plasma processing method includes providing a substrate in a processing chamber, the substrate having a surface, and generating a plasma in the processing chamber. The plasma provides at least two regions that exhibit different plasma densities. The method includes exposing at least some of the surface to both of the at least two regions. Exposing the surface to both of the at least two regions may include rotating the plasma and may cyclically expose the surface to the plasma density differences. Exposing to both of the at least two regions may modify a composition and/or structure of the surface. The plasma may include a plasmoid characterized by a steady state plasma wave providing multiple plasma density lobes uniformly distributed about an axis of symmetry and providing plasma between the lobes exhibiting lower plasma densities. Depositing the layer can include ALD and exposure may remove an ALD precursor ligand.

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