Patent attributes
High dielectric constant (high-k) materials are formed directly over oxidation-susceptible conductors such as silicon. A discontinuous layer is formed, with gaps between grains of the high-k material. Exposed conductor underneath the grain boundaries is oxidized or nitridized to form, e.g., silicon dioxide or silicon nitride, when exposed to oxygen or nitrogen source gases at elevated temperatures. This dielectric growth is preferential underneath the grain boundaries such that any oxidation or nitridation at the interface between the high-k material grains and covered conductor is not as extensive. The overall dielectric constant of the composite film is high, while leakage current paths between grains is reduced. Ultrathin high-k materials with low leakage current are thereby enabled.
