US Patent 7323744 Semiconductor device and fabrication method therefor

A semiconductor device includes an ONO film (17) formed on a semiconductor substrate (15), a first gate (14), the first gate (14) formed on the ONO film (17), a source (10) and a drain (12) provided at both sides of the first gate (14) to face each other, and a second gate (16), the second gate (16) being a side gate provided at a side of the first gate (14) other than the side where the source (10) and the drain (12) are provided. This makes it possible to provide the semiconductor device in which a desired circuit characteristic is obtainable in a non-destructive manner and in a non-volatile fashion while reducing the trial production times thereof for IC development.