Is a
Patent attributes
Patent Jurisdiction
Patent Number
Date of Patent
February 5, 2008
Patent Application Number
10220895
Date Filed
November 27, 2001
Patent Primary Examiner
Patent abstract
A method is adopted for deposition technology using a focused ion beam device, characterized by enabling structures to be formed by using phenanthrene as a source gas and using ions of gallium or gold, silicon or beryllium etc. of energies of 5 to 100 keV from a liquid-metal ion source as ions so as to give a gas blowing density of five to ten times greater than the case of deposition in the related art, with directionality of the gas blowing being both isotropic and symmetrical.
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