Is a
Patent attributes
Current Assignee
Patent Jurisdiction
Patent Number
Patent Inventor Names
T. Warren Weeks, Jr.0
Thomas Gehrke0
Cem Basceri0
Christopher Harris0
Date of Patent
February 5, 2008
0Patent Application Number
111473410
Date Filed
June 8, 2005
0Patent Primary Examiner
Patent abstract
A heterojunction device includes a first layer of p-type aluminum gallium nitride; a second layer of undoped gallium nitride on the first layer; a third layer of aluminum gallium nitride on the second layer; and an electron gas between the second and third layers. A heterojunction between the first and second layers injects positive charge into the second layer to compensate and/or neutralize negative charge within the electron gas.
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