US Patent 7330370 Enhanced functionality in a two-terminal memory array

A memory array with enhanced functionality is presented. Each cell in the array includes a pair of memory element electrodes. A read current across the pair of memory element electrodes is indicative of stored information and different write voltage levels across the pair of memory element electrodes are employed to store nonvolatile information. The array has at least one enhanced functionality portion that performs operations selected from the group consisting of reference, error correction, device specific storage, defect mapping tables, and redundancy.