Patent attributes
In a method of fabricating a semiconductor device, a dielectric layer is formed over a conductive region. A dual damascene structure including a trench and a via is formed within the dielectric layer. A liner is formed over the dual damascene structure. The liner is selectively removed from above the upper surface of the conductive region to expose the upper surface of the conductive region. After the selectively removing process, at least a portion of the liner remains over the lower surface of the trench and the sidewalls of the trench and the via hole. A wet etch can then be performed to etch a recess in the conductive region. A conductive material is then formed within the damascene structure. This conductive material physically contacts the conductive region and is separated from the dielectric layer by the remaining portion of the liner.
