Is a
Patent attributes
Patent Jurisdiction
Patent Number
Date of Patent
February 26, 2008
Patent Application Number
10721251
Date Filed
November 26, 2003
Patent Primary Examiner
Patent abstract
The present invention provides a method for removing a metal element effectively from a crystalline semiconductor film obtained with the use of the metal element, without increasing the number of processes. In the present invention, an amorphous semiconductor film is formed on an insulating surface, a metal element for promoting crystallization is added to the amorphous semiconductor film, the amorphous semiconductor film is heated to form a crystallized semiconductor film, a continuous wave laser beam is irradiated to the crystallized semiconductor film, and an upper portion of the crystallized semiconductor film is removed.
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