US Patent 7335552 Electrode for thin film capacitor devices
Patent 7335552 was granted and assigned to Raytheon on February, 2008 by the United States Patent and Trademark Office.
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Patent abstract
A method of forming a conductor on a substrate including steps of depositing tantalum on a glass layer of the substrate; oxidizing the tantalum; and depositing a noble metal on the oxidized tantalum to form the conductor. The method can be used to form a ferroelectric capacitor or other thin film ferroelectric device. The device can include a substrate comprising a glass layer; and an electrode connected to the glass layer. The electrode comprising can include a noble metal connected to the glass layer by an adhesion layer comprising Ta2O5.
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US Patent 07335552 Electrode for thin film capacitor devices US Patent 7335552 Electrode for thin film capacitor devices
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Patent Number
0733555200
Patent Number
733555200
Edits on 31 Mar, 2023
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Infobox
Is a
Current Assignee
Patent Jurisdiction
Patent Number
073355520
Date of Patent
February 26, 2008
0Patent Application Number
101470930
Date Filed
May 15, 2002
0Official Website
Patent Primary Examiner
Edits on 27 Sep, 2022
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Infobox
Is a
Current Assignee
Patent Jurisdiction
Patent Number
073355520
Date of Patent
February 26, 2008
0Patent Application Number
101470930
Date Filed
May 15, 2002
0Official Website
Patent Primary Examiner
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US Patent 07335552 Electrode for thin film capacitor devices
Infobox
Is a
Current assignee
Patent jurisdiction
Patent number
07335552
Date of patent
February 26, 2008
Patent application number
10147093
Date Filed
May 15, 2002
Patent primary examiner
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