Is a
Patent attributes
Patent Jurisdiction
Patent Number
Patent Inventor Names
Takuya Kobayashi0
Tomonori Aoyama0
Hiroshi Tomita0
Katsuyuki Sekine0
Date of Patent
February 26, 2008
0Patent Application Number
114947360
Date Filed
July 28, 2006
0Patent Primary Examiner
Patent abstract
A method of manufacturing a semiconductor device includes forming a trench in an interlayer dielectric film on the semiconductor substrate, the trench reaching a semiconductor substrate and having a sidewall made of silicon nitride film; depositing a gate insulation film made of a HfSiO film at a temperature within a range of 200 degrees centigrade to 260 degrees centigrade, so that the HfSiO film is deposited on the semiconductor substrate which is exposed at a bottom surface of the trench without depositing the HfSiO film on the silicon nitride film; and filling the trench with a gate electrode made of metal.
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