Patent attributes
An advanced multi-bit magnetic random access memory device and a method for writing to the advanced multi-bit magnetic random access memory device. The magnetic memory includes one or more pair-cells. A pair-cell is two memory cells. Each memory cell has a magnetic multilayer structure. The structure includes a magnetically changeable ferromagnetic layer, a ferromagnetic reference layer having a non-changeable magnetization state, and a corresponding spacer layer separating the ferromagnetic layers. The memory cells are arranged such that an effective remnant magnetization of each of the cells is non-parallel from the cells' long-axis. This allows for more than one-bit to be stored as well as for efficient writing and reduced power consumption.
