Is a
Patent attributes
Patent Jurisdiction
Patent Number
Patent Inventor Names
Atsushi Matsushita0
Kazuaki Inukai0
Date of Patent
March 4, 2008
Patent Application Number
11014884
Date Filed
December 20, 2004
Patent Primary Examiner
Patent abstract
A method of fabricating a semiconductor device includes forming a metal wire on a substrate, forming an interlayer insulating film on the metal wire, forming a resist pattern on the interlayer insulating film, selectively etching the interlayer film to form a trench or via-hole in the interlayer insulating film and reaching the metal wire, and ashing, using a reducing gas, to remove the resist pattern.
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