Is a
Patent attributes
Patent Jurisdiction
Patent Number
Date of Patent
March 4, 2008
Patent Application Number
10406295
Date Filed
April 4, 2003
Patent Primary Examiner
Patent abstract
A laser annealing method for obtaining a crystalline semiconductor film having a large grain size is provided. Laser light is irradiated to the top surface and the bottom surface of an amorphous semiconductor film when crystallizing the amorphous semiconductor film by laser light irradiation. Furthermore, a relationship of 0<(I0′/I0)<1, or 1<(I0′/I0) is achieved for the ratio (I0/I0′) between the effective energy strength of the laser light when irradiated to the top surface (I0) and the effective energy strength of the laser light when irradiated to the bottom surface (I0′).
Timeline
No Timeline data yet.
Further Resources
No Further Resources data yet.
