Patent 7341909 was granted and assigned to Micron Technology on March, 2008 by the United States Patent and Trademark Office.
The invention includes methods of forming semiconductor constructions in which electrically conductive structures are formed between bitlines to electrically connect with storage node contacts. The bitlines can be formed within trenches having faceted top portions. The invention also includes semiconductor structures containing trenches with faceted top portions, and containing bitlines within the trenches.