Is a
Patent attributes
Current Assignee
Patent Jurisdiction
Patent Number
Date of Patent
March 11, 2008
Patent Application Number
11271094
Date Filed
November 10, 2005
Patent Primary Examiner
Patent abstract
A field effect transistor (FET) device structure and method for forming FETs for scaled semiconductor devices. Specifically, FinFET devices are fabricated from silicon-on-insulator (SOI) wafers in a highly uniform and reproducible manner. The method facilitates formation of FinFET devices with improved and reproducible fin height control while providing isolation between source and drain regions of the FinFET device.
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