Is a
Patent attributes
Patent Jurisdiction
Patent Number
Patent Inventor Names
Kyu-Charn Park0
Sung-Nam Chang0
Kwang-Shik Shin0
Date of Patent
March 18, 2008
0Patent Application Number
113410730
Date Filed
January 27, 2006
0Patent Primary Examiner
Patent abstract
A non-volatile memory device comprises a gate line that includes a gate dielectric layer, a bottom gate pattern, an inter-gate dielectric and a top gate pattern, which are sequentially stacked. The width of the inter-gate dielectric is narrower than that of the bottom gate pattern.
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