US Patent 7345334 Integrated circuit (IC) with high-Q on-chip discrete capacitors

A semiconductor structure that may be a discrete capacitor, a Silicon On Insulator (SOI) Integrated Circuit (IC) including circuits with discrete such capacitors and/or decoupled by such discrete capacitors and an on-chip decoupling capacitor (decap). One capacitor plate may be a well (N-well or P-well) in a silicon bulk layer or a thickened portion of a surface silicon layer. The other capacitor plate may be doped polysilicon and separated from the first capacitor plate by capacitor dielectric, e.g., CVD or thermal oxide. Contacts to each of the capacitor plates directly connect and extend from the respective plates, such that direct contact is available from both plates.