Patent attributes
A method and system is disclosed for reducing or eliminating leakage between a pinned photodiode and shallow trench isolation structure fabricated therewith while optimizing the sensitivity of the photodiode. Provided is a system with an N+ region implanted in a P-type substrate; a P-type well separating the N+ region from the shallow trench isolation (STI) structure; and at least a P+ region over the N+ region, and overlapping at least part of the P-type well and a substrate portion between the N+ region and P-type well. The space between the N+ region and a damaged region adjacent the STI is greater than the distance that the depletion region between the N+ region and the P-type well, expands. The junctions of the various features are optimized to maximize a photosensitive response for the wavelength of the absorbed light as well as reducing or eliminating electrical leakage.
