Is a
Patent attributes
Current Assignee
Patent Jurisdiction
Patent Number
Date of Patent
April 1, 2008
Patent Application Number
11490613
Date Filed
July 21, 2006
Patent Primary Examiner
Patent abstract
A method of forming a semiconductor device includes forming a three-dimensional structure formed of a semiconductor on a semiconductor substrate, and isotropically doping the three-dimensional structure by performing a plasma doping process using a first source gas and a second source gas. The first source gas includes n-type or p-type impurity elements, and the second source gas includes a dilution element regardless of the electrical characteristic of a doped region.
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