Is a
Patent attributes
Patent Jurisdiction
Patent Number
Patent Inventor Names
Min Yong Lee0
Seung Woo Jin0
Kyoung Bong Rouh0
Date of Patent
April 1, 2008
Patent Application Number
11272542
Date Filed
November 10, 2005
Patent Primary Examiner
Patent abstract
Disclosed herein is a method of manufacturing a semiconductor device via gate-through ion implantation, comprising forming a gate stack on a semiconductor substrate and performing ion implantation for control of the threshold voltage and junction ion implantation for formation of source/drain regions, on the entire surface of the semiconductor substrate having the gate stack formed thereon. In accordance with the present invention, since ion implantation is carried out after formation of the gate stack involving a thermal process, there are no changes in concentrations of implanted dopants due to heat treatment upon formation of the gate stack.
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