US Patent 7354501 Upper chamber for high density plasma CVD
Patent 7354501 was granted and assigned to Applied Materials on April, 2008 by the United States Patent and Trademark Office.
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The present invention is directed to an upper chamber design of a plasma CVD chamber which provides more uniform conditions for forming thin CVD films on a substrate. Embodiments of the invention improve temperature control of the upper chamber and improve particle performance by reducing or minimizing the temperature fluctuations on the dome between the deposition and non-deposition cycles. In accordance with an aspect of the present invention, an apparatus for processing semiconductor substrates comprises a chamber defining a plasma processing region therein. The chamber includes a bottom, a side wall, and a dome disposed on top of the side wall. The dome has a substantially flat dome top. A top RF coil is disposed above the dome top, and has an outer loop which is larger in size than the substrates to be processed in the chamber. A cold plate is disposed above the top RF coil, and is larger in size than the substrates to be processed in the chamber.
US Patent 07354501 Upper chamber for high density plasma CVD US Patent 7354501 Upper chamber for high density plasma CVD
US Patent 07354501 Upper chamber for high density plasma CVD
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