Is a
Patent attributes
Current Assignee
0
Patent Jurisdiction
Patent Number
Date of Patent
April 8, 2008
0Patent Application Number
114538820
Date Filed
June 16, 2006
0Patent Primary Examiner
Patent abstract
For simplifying the dual-damascene formation steps of a multilevel Cu interconnect, a formation step of an antireflective film below a photoresist film is omitted. Described specifically, an interlayer insulating film is dry etched with a photoresist film formed thereover as a mask, and interconnect trenches are formed by terminating etching at the surface of a stopper film formed in the interlayer insulating film. The stopper film is made of an SiCN film having a low optical reflectance, thereby causing it to serve as an antireflective film when the photoresist film is exposed.
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