Is a
Patent attributes
Patent Jurisdiction
Patent Number
Patent Inventor Names
Ta-yung Yang0
Tuo-Hsin Chien0
Chih-Feng Huang0
Jenn-yu G. Lin0
Date of Patent
April 8, 2008
0Patent Application Number
112227070
Date Filed
September 8, 2005
0Patent Primary Examiner
Patent abstract
An electrostatic discharge (ESD) device with a parasitic silicon controlled rectifier (SCR) structure and controllable holding current is provided. A first distance is kept between a first N+ doped region and a first P+ doped region, and a second distance is kept between a second P+ doped region and a third N+ doped region. In addition, the holding current of the ESD device can be set to a specific value by modulating the first distance and the second distance. The holding current is in inverse proportion to the first distance and the second distance.
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