US Patent 7355269 IC on non-semiconductor substrate

An integrated circuit and method of fabrication including a non-semiconductor material substrate with a layer of single crystal rare earth deposited on the surface thereof. A layer of single crystal semiconductor material is grown on the layer of single crystal rare earth and an integrated circuit is formed in the layer of single crystal semiconductor material. In a preferred embodiment the single crystal semiconductor material is silicon and the integrated circuit is formed by standard semiconductor industry processes.