Is a
Patent attributes
Patent Jurisdiction
Patent Number
Patent Inventor Names
Min Li0
Yu-Hsia Chen0
Chyu-Jiuh Torng0
Kunliang Zhang0
Date of Patent
April 8, 2008
0Patent Application Number
110438390
Date Filed
January 26, 2005
0Patent Primary Examiner
Patent abstract
The effectiveness of an IrMn pinning layer in a CPP GMR device at high switching fields has been improved by replacing the conventional single layer seed by a layer of tantalum and either ruthenium or copper. The tantalum serves to cancel out the crystallographic influence of underlying layers while the ruthenium or copper provide a suitable base on which to grow the IrMn layer.
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