Patent attributes
A polishing pad for chemically mechanically polishing a semiconductor wafer comprises a first groove pattern circularly formed on the surface of the polishing pad, and a second groove pattern formed on the surface of the polishing pad while spirally extending from the circular center of the polishing pad to the outside so as to overlap the first groove pattern. The polishing pad further comprises a third groove pattern formed on the surface of the polishing pad while radially extending from the circular center of the polishing pad to the outside so as to overlap the first and second groove patterns. A chemical mechanical polishing apparatus comprises the polishing pad. The polishing pad of the chemical mechanical polishing apparatus has enhanced groove patterns formed on the polishing pad to provide uniform distribution of the slurry, thereby enhancing polishing speed and polishing uniformity.