Is a
Patent attributes
Current Assignee
Patent Jurisdiction
Patent Number
Patent Inventor Names
Kensaku Motoki0
Takuji Okahisa0
Naoki Matsumoto0
Date of Patent
April 15, 2008
0Patent Application Number
106915400
Date Filed
October 24, 2003
0Patent Primary Examiner
Patent abstract
The method of making a GaN single crystal substrate comprises a mask layer forming step of forming on a GaAs substrate 2 a mask layer 8 having a plurality of opening windows 10 disposed separate from each other; and an epitaxial layer growing step of growing on the mask layer 8 an epitaxial layer 12 made of GaN.
Timeline
No Timeline data yet.
Further Resources
No Further Resources data yet.
