US Patent 7357838 Relaxed silicon germanium substrate with low defect density
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Patent abstract
A method of forming a strained silicon layer on a relaxed, low defect density semiconductor alloy layer such as SiGe is provided.
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US Patent 07357838 Relaxed silicon germanium substrate with low defect density US Patent 7357838 Relaxed silicon germanium substrate with low defect density
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Patent Number
0735783800
Patent Number
735783800
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Patent Jurisdiction
Patent Number
073578380
Date of Patent
April 15, 2008
0Patent Application Number
110747380
Date Filed
March 8, 2005
0Official Website
Patent Primary Examiner
Edits on 23 Sep, 2022
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Infobox
Is a
Patent Jurisdiction
Patent Number
073578380
Date of Patent
April 15, 2008
0Patent Application Number
110747380
Date Filed
March 8, 2005
0Official Website
Patent Primary Examiner
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US Patent 07357838 Relaxed silicon germanium substrate with low defect density
Infobox
Is a
Patent jurisdiction
Patent number
07357838
Date of patent
April 15, 2008
Patent application number
11074738
Date Filed
March 8, 2005
Patent primary examiner
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