Patent attributes
The present invention provides an SOI wafer having at least an SOI layer, in which a plain orientation of the SOI layer is off-angled from {110} only in a direction to <100>, and an off-angle is from 5 minutes to 2 degrees, and a method of producing an SOI wafer comprising at least bonding a base wafer and a bond wafer consisting of a silicon single crystal, and forming an SOI layer by thinning the bond wafer, wherein the bond wafer is used where a plain orientation thereof is off-angled from {110} only in a direction to <100>, and an off-angle is from 5 minutes to 2 degrees. Thereby, there can be provided an SOI wafer having both high uniformity of film thickness and good micro-roughness to be suitable for fabricating high speed devices, and provided a method of producing the SOI wafer.
