Is a
Patent attributes
Patent Jurisdiction
Patent Number
Patent Inventor Names
Makiko Kageyama0
Date of Patent
April 15, 2008
0Patent Application Number
113708910
Date Filed
March 9, 2006
0Patent Primary Examiner
Patent abstract
A method of manufacturing a semiconductor device, includes the steps of: raising a temperature of a sapphire substrate which is included in the semiconductor device from a room temperature to a preheat temperature of 150° C. to 450° C. and keeping the preheat temperature for a first predetermined time, thereby preheating the semiconductor device; and subsequently raising a temperature of the sapphire substrate from the preheat temperature to a thermal reaction temperature of 500° C. or higher and keeping the thermal reaction temperature for a second predetermined time, thereby performing a thermal reaction treatment of the semiconductor device.
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