Is a
Patent attributes
Patent Jurisdiction
Patent Number
Patent Inventor Names
Yuichiro Okunuki0
Date of Patent
April 15, 2008
0Patent Application Number
110417210
Date Filed
January 25, 2005
0Patent Primary Examiner
Patent abstract
A semiconductor laser includes an active layer on an n-type InP substrate. A diffraction grating and a p-type InP cladding layer are above the active layer. The diffraction grating has at least one phase shift portion. Facets of the distributed feedback laser each have thereon an antireflective film having a reflectance of 3% or less. The diffraction grating does not extend into end regions of the distributed feedback laser, each end region extending 1 μm-20 μm from a respective one of the facets toward an opposite end in a waveguide direction.
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